Abstract
Zinc Oxide (ZnO) has been characterized by means of capacitance spectroscopy. The capacitance voltage measurement of schottky diode is performed by standard method available in our DLTS setup. The capacitance voltage measurement of ZnO obtained at various temperatures under the same reverse biasing conditions for the material. From these measurements the following parameters were evaluated: The doping concentration of ZnO was calculated as 1.7979×1015 cm-3 at room temperature and the value decreased with decrease in temperature. The built in potential calculated for ZnO at room temperature was calculated as 0.64V. The value of built in potential of ZnO initially increased then decreased with the decrease of temperature. The depth profile of ZnO remained consistent and showed no change as the temperature varied from room temperature to lower values. Comparison of the data with the
literature showed that all the samples were affected by native and/or intrinsic point defects developed during growth or metallization process.
Noor ul Huda Khan Asghar, Hamdullah Khan, Zaheer Abbas Gilani, Muhammad Saifullah Awan, Irshad Ahmad, Wahab Q, Muhammad Asghar. (2013) Characterization of ZnO by Means of C-V Measurement of Respective Schottky Diode by DLTS, Journal of Applied and Emerging Sciences, Volume 4, Issue 1.
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