Abstract
This paper presents the design and analysis of a
multistage low-noise amplifier (LNA) using Pseudomorphic
High Electron Mobility Transistor (PHEMT). The LNA is
designed at the center frequency of 12.7GHz with a gain of
30dB, bandwidth of 72MHz and noise figure of less than 3 dB.
This paper is an extension of the author’s previous work related
to design of single stage LNA [1].The matching design is carried
using Narrowband amplifier design technique. The design
methodology required the analysis of the transistor; stability
check and proper matching network selection for input and
output. Ideal microwave amplifier equations are used to carry
out the analytical treatment for the design. The required gain and
other parameters are achieved by a three stage Low Noise
Amplifier. The most important task in the design is to establish a
tradeoff between the noise figure and gain of the amplifier.
Advanced Design Software (ADS) is used to carry out
simulations for the design and to see how the design is
comparable to the specifications. The design is optimized using
stub matching resulting in reduced noise figure and minimizing
the standing wave ratio. The DC and AC simulations for the
LNA are presented in the paper [1].
Mujeeb Ahmed, Nosherwan Shoaib, Iftekhar Mahmood. (2011) Design, Analysis and Optimization of Multistage LNA at KUBand , Journal of Space Technology , Volume 1, Issue 1.
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